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A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

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9 Author(s)
Gersbach, M. ; Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland ; Maruyama, Y. ; Trimananda, R. ; Fishburn, M.W.
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We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 3232 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential non-linearity (DNL) and integral non-linearity (INL) were measured at ±0.4 and ±1.2 LSBs, respectively. The pixel array was fabricated with a pitch of 50 μm in both directions and with a total TDC area of less than 2000 μm2. The target application for this sensor is time-resolved imaging, in particular fluorescence lifetime imaging microscopy and 3D imaging. The characterization shows the suitability of the proposed sensor technology for these applications.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:47 ,  Issue: 6 )

Date of Publication:

June 2012

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