Referenced Items are not available for this document.
A new technique for Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride is presented in this paper. This technique involves specially built equipment which allows the use of low temperature, low frequency processing. The results obtained show silicon nitride which has all of the positive characteristics of conventional silicon nitride but with equipment which is much less expensive and very easy to use and maintain
Published in:
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Date of Conference: 20-23 Jul 1997
- Page(s):
- 173 - 176
- Meeting Date :
- 20 Jul 1997-23 Jul 1997
- ISSN :
- 0749-6877
- Print ISBN:
- 0-7803-3790-5
- INSPEC Accession Number:
- 5766806
- Conference Location :
- Rochester, NY
- Digital Object Identifier :
- 10.1109/UGIM.1997.616719
- Product Type:
- Conference Publications
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