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Correlation Between Oxide Trap Generation and Negative-Bias Temperature Instability

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4 Author(s)
Boo, A.A. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Ang, D.S. ; Teo, Z.Q. ; Leong, K.C.

Evidence shows that substantial interface degradation under negative-bias temperature (NBT) stressing does not result in any apparent oxide trap generation. The link between NBT instability and oxide trap generation is actually found in the recoverable hole-trapping component (R) of the former. When R is constant, independent of the number of stress/relaxation cycles, no apparent oxide trap generation is observed in spite of nonnegligible interface degradation. However, when oxide trap generation occurs, a correlated decrease of R is observed. Analysis shows that the generated oxide traps are due to a portion of the trapped holes being transformed into a more permanent form. A possible explanation based on the oxygen vacancy defect is given.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 4 )

Date of Publication:

April 2012

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