Scheduled System Maintenance:
On May 6th, system maintenance will take place from 8:00 AM - 12:00 PM ET (12:00 - 16:00 UTC). During this time, there may be intermittent impact on performance. We apologize for the inconvenience.
By Topic

Comparison of 4.5-kV Press-Pack IGBTs and IGCTs for Medium-Voltage Converters

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Filsecker, F. ; Elektrotech. Inst., Tech. Univ. Dresden, Dresden, Germany ; Alvarez, R. ; Bernet, S.

Recently developed insulated-gate bipolar transistor (IGBT) press-pack (PP) devices with a blocking voltage of 4.5 kV are being used in medium-voltage converters as an alternative to integrated gate-commutated thyristors (IGCTs). This paper presents an overview of PP packaging and both semiconductor technologies. A quantitative comparison of these devices is achieved through measurements for a 4.5-kV 1.2-kA IGBT and a 4.5-kV 4-kA IGCT. The laboratory test bench for the switching transient characterization at a dc-link voltage of 2.5 kV and currents up to 3 kA is described. Conduction, blocking, and switching behavior for junction temperatures up to 125 °C are investigated. The IGCT and the IGBT are tested using a di/dt-limiting clamp circuit. In addition, the IGBT is tested in hard switching mode.

Published in:

Industrial Electronics, IEEE Transactions on  (Volume:60 ,  Issue: 2 )