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Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

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4 Author(s)
Gnudi, A. ; ARCES-DEIS, Univ. of Bologna, Bologna, Italy ; Reggiani, S. ; Gnani, E. ; Baccarani, G.

An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large , including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 3 )