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Delay Analysis of Graphene Field-Effect Transistors

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6 Author(s)
Wang, Han ; Microsyst. Technol. Lab., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Hsu, Allen ; Dong Seup Lee ; Ki Kang Kim
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In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 3 )