By Topic

A Low Power Real-time On-Chip Power Sensor in 45-nm SOI

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Bhagavatula, Srikar ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Byunghoo Jung

This paper introduces a real-time on-chip power and temperature sensor for active power management in scaled CMOS technologies. In a distinct departure from earlier power estimation techniques, this sensor measures the voltage drop due to a current load and converts it into pulse counts to get a power estimate in real time. Linear regression is used to estimate load current based on the measured output frequency at a given temperature. The same sensor is also used to estimate temperature in a mode where output time period decreases linearly with temperature. Measurement results show accuracy to within ±1.05°C for temperature estimation in the range of 22 °C-100°C and within ±10% of the actual power consumed (for loads ≤ 3.3 mA). Fabricated in 45-nm SOI technology, this power and temperature sensor occupies an area of 140 μm×140μm and has a power overhead of 120 μW at 1.2 V supply.

Published in:

Circuits and Systems I: Regular Papers, IEEE Transactions on  (Volume:59 ,  Issue: 7 )