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Drift-resilient cell-state metric for multilevel phase-change memory

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7 Author(s)
Papandreou, N. ; IBM Res. - Zurich, Ruschlikon, Switzerland ; Sebastian, A. ; Pantazi, A. ; Breitwisch, M.
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A new cell-state metric is proposed for multilevel phase-change memory (PCM) that is more representative of the fundamental programmed entity, i.e., the amorphous/crystalline phase configuration in the PCM cell. This metric exhibits improved performance in terms of drift and better sensing resolution of cell states with a large amorphous-phase fraction when compared to the conventional low-field resistance metric. Experimental results using PCM test devices of mushroom type demonstrate the efficacy of the new metric.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011

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