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Extended scalability and functionalities of MRAM based on thermally assisted writing

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14 Author(s)
Dieny, B. ; Grenoble-INP, INAC, SPINTEC, UJF, Grenoble, France ; Sousa, R. ; Bandiera, S. ; Castro Souza, M.
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MRAM are already used in low density applications such as microcontrollers or for spatial/avionics applications where they benefit from their radiation hardness. Thermally assisted writing allows extending the downsize scalability of both FIMS and STT-MRAM below the 20nm node. Within a few years, MRAM can play an important role in the memory hierarchy of electronic circuits. They may be first used as DRAM replacement below the 20nm node and in a second step even closer the logic units. Besides memories, TAS-FIMS with soft reference allows to introduce new functionalities such as the Match In Place particularly promising for security and routers applications. This work has been partly supported by the European Commission through the ERC grant HYMAGINE.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011

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