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High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band

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6 Author(s)
Pottrain, A. ; STMicroelectron., Crolles, France ; Lacave, T. ; Ducatteau, D. ; Gloria, D.
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In this letter, we report load pull measurements on SiGe HBTs at 94 GHz. Nowadays, this kind of device exhibits FMAX above 400 GHz and thus has a growing interest for W-band applications. A load pull test bench is developed for the characterization of this device with special care on architecture and calibration procedure for accurate measurements in 75-110 GHz. The device was characterized under large signal operation showing attractive performance for power amplifier design. A state-of-the-art power density of 18.5 mW/μm2 at 1-dB compression has been obtained at 94 GHz.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 2 )