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High-speed InP/InGaAs uni-traveling-carrier photodiodes with 3-dB bandwidth over 150 GHz

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4 Author(s)
Shimizu, N. ; NTT Syst. Electron. Lab., Kanagawa, Japan ; Watanabe, N. ; Furuta, T. ; Ishibashi, T.

High-speed and high-saturation-power photodetectors operating at 1.3 and 1.55 /spl mu/m wavelength are attracting considerable attention for the purpose of configuring receivers with no broadband electronic post-amplifier. The uni-traveling-carrier photodiode (UTCPD) having a p-type photo-absorption layer and a widegap electron-collection layer is one candidate that fulfills the requirements. In this paper, we study photo-absorption layer design for faster response and demonstrate UTC-PD operations with 3-dB bandwidth of 152 GHz.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997