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Reduced 1/f noise and g/sub m/ degradation for sub-0.25 /spl mu/m MOSFETs with 25 /spl Aring/-50 /spl Aring/ gate oxides grown on nitrogen implanted Si substrates

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10 Author(s)
Liu, C.T. ; Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA ; Misra, D. ; Cheung, K.P. ; Alers, G.B.
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We introduce a light dose of nitrogen implant (N/sup +/ I/I) into the Si substrate before growing the oxides, and incorporated /spl sim/3-4 atomic% of nitrogen in the oxides. Consequently, the 1/f noise is reduced by a factor of 2-5, and the g/sub m/ degradation is reduced by a factor of 5. The N/sup +/ I/I does not affect the oxide breakdown field which continues to follow the hole-trap model as the oxide thickness reaches 25 /spl Aring/ in this experiment. MOSFETs of 0.2 /spl mu/m physically are then fabricated with 25 /spl Aring/ oxides on N/sup +/ I/I substrates.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997