By Topic

Temperature compensation technique of GaAs FET by rotating the gate orientation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
H. Furukawa ; Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan ; T. Tanaka ; T. Fukui ; K. Tateoka
more authors

It is well known that GaAs power FET occasionally shows thermal runaway. There are some explanations about this effect, such as increase of leakage current and lowering the potential barrier of the gate as the increase of temperature. We found such effect is closely related to the gate orientation for the first time. Based on this characteristics of GaAs FET, we demonstrate temperature compensation technique of GaAs power amplifier just by rotating the gate orientation of the FET.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997