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Realizing and and or Functions With Single Vertical-Slit Field-Effect Transistor

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9 Author(s)
Kamath, A. ; Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore ; Zhixian Chen ; Nansheng Shen ; Singh, N.
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This letter experimentally demonstrates and and or functionalities with a single MOS transistor. Device architecture and fabrication follow the recent work on fabrication-based feasibility assessment of junctionless vertical-slit field-effect transistor. Slit width variation is used to realize a particular functionality-wider for or function and narrower for and function. The fabricated n-type devices with the and and or functionalities exhibit good electrical performance: low off current (<; 5 pA/μm) and high ION/IOFF ratio (>; 106). Furthermore, we briefly discuss the implication of these devices in CMOS NAND logic implementation.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 2 )

Date of Publication:

Feb. 2012

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