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Design of broad-band mm-wave sige power amplifiers applying full EM simulation

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3 Author(s)
Hamidian, A. ; Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany ; Subramanian, V. ; Boeck, G.

This work presents the design of two broad-band mm-wave power amplifiers utilizing the 200 GHz 0.25 μm SiGe HBTs. The broad-band gain performance of the power amplifiers has been achieved utilizing cascaded structures. Also a full electro-magnetic simulation is utilized to decrease the discrepancies between the simulated and measured results. The two-stage power amplifier with the cascode topology achieves a flat gain response with a 3 dB gain bandwidth covering almost the entire V-band (50 GHz to 70 GHz). With a 20 dB power gain the maximum output power at 1 dB gain compression and saturation level are 14 dBm and 15 dBm. The measured peak power added efficiency is 15%.

Published in:

Microwave Workshop Series on Millimeter Wave Integration Technologies (IMWS), 2011 IEEE MTT-S International

Date of Conference:

15-16 Sept. 2011