By Topic

An Integrated Low-Noise Sensing Circuit With Efficient Bias Stabilization for CMOS MEMS Capacitive Accelerometers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Tan, S.S. ; Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Liu, C.Y. ; Yeh, L.K. ; Chiu, Y.H.
more authors

A sensing circuit in 0.35 μm CMOS technology for CMOS MEMS capacitive accelerometers has been designed in this work with emphasis on managing noise, sensor offset, and the dc bias at input terminals. The issue of dc bias is particularly addressed and an efficient method is proposed. An example of integrating surface micromachined sensors and the designed sensing circuits on the same chip is demonstrated. Experimental results showed that the proposed circuit led to good noise performance, the random offset in the sensors was efficiently compensated, and the input dc bias voltage was well maintained. The sensitivity of the accelerometer is 457 mV/g. The output noise floor is 54 μg/√Hz, which corresponds to an effective capacitance noise floor of 0.0162 aF/√Hz. The total area of the dual-axis surface micromachined accelerometer chip is 5.66 mm2 and the current consumption is 1.56 mA under a 3.3 V voltage supply.

Published in:

Circuits and Systems I: Regular Papers, IEEE Transactions on  (Volume:58 ,  Issue: 11 )