Cart (Loading....) | Create Account
Close category search window
 

Passivation of InP-based HBTs for high bit rate circuit applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Caffin, D. ; Lab. de Bagneux, CNET, Bagneux, France ; Bricard, L. ; Courant, J.L. ; How Kee Chun, L.S.
more authors

We have studied different materials (silicon nitride, silicon oxide, polyimide) for passivating InP-based HBTs, and their influence on the device electrical performances. Polyimide was found to induce the least degradation after passivation. A double heterojunction InP/InGaAs HBT fabrication process, including polyimide passivation and planarization, has been assembled, allowing us to realize high bit-rate circuits, such as a 36 Gb/s 2:1 multiplexer

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.