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Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs

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5 Author(s)
T. Suemitsu ; NTT Syst. Electron. Labs., Kanagawa, Japan ; T. Enoki ; M. Tomizawa ; N. Shigekawa
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The aim of this study is to find out the relationship between the kink and the structure of InAlAs/InGaAs HEMTs, or in other words, what the main parameters affecting the kink are. Two-dimensional device simulations were performed for this purpose, in which impact ionization and surface states were considered. For the impact ionization, an improved model which takes non-local effects into account was used for accurate estimation of ionization coefficients. The surface states in the side-etched region, expressed using a deep-level trap, were also necessary to represent the kink in the device simulation

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997