Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs

The aim of this study is to find out the relationship between the kink and the structure of InAlAs/InGaAs HEMTs, or in other words, what the main parameters affecting the kink are. Two-dimensional device simulations were performed for this purpose, in which impact ionization and surface states were considered. For the impact ionization, an improved model which takes non-local effects into account was used for accurate estimation of ionization coefficients. The surface states in the side-etched region, expressed using a deep-level trap, were also necessary to represent the kink in the device simulation.