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0.9 W/mm, 76% P.A.E. (7 GHz) GaInAs/InP composite channel HEMTs

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5 Author(s)
J. B. Shealy ; Hughes Res. Labs., Malibu, CA, USA ; M. Matloubian ; T. Y. Liu ; W. Lam
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The power performance of Ga0.47In0.53As/InP composite channel HEMTs at 7 GHz is presented. Devices with a gate width of 300 μm exhibit 0.9 W/mm and 76% power-added-efficiency (P.A.E.) at 7 GHz with a two-terminal breakdown voltage of 13.3 V

Published in:

Indium Phosphide and Related Materials, 1997., International Conference on

Date of Conference:

11-15 May 1997