Referenced Items are not available for this document.
The power performance of Ga0.47In0.53As/InP composite channel HEMTs at 7 GHz is presented. Devices with a gate width of 300 μm exhibit 0.9 W/mm and 76% power-added-efficiency (P.A.E.) at 7 GHz with a two-terminal breakdown voltage of 13.3 V
Published in:
Indium Phosphide and Related Materials, 1997., International Conference on
Date of Conference: 11-15 May 1997
- Page(s):
- 20 - 23
- Meeting Date :
- 11 May 1997-15 May 1997
- ISSN :
- 1092-8669
- Print ISBN:
- 0-7803-3898-7
- INSPEC Accession Number:
- 5678674
- Conference Location :
- Cape Cod, MA
- Digital Object Identifier :
- 10.1109/ICIPRM.1997.600018
- Product Type:
- Conference Publications
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