Referenced Items are not available for this document.
This letter discusses the first implementation of the high voltage/high power (HiVP) architecture in silicon at millimeter-wave frequencies. Implemented in a commercial 0.12 μm SiGe HBT BiCMOS process, PSAT = 19.0 dBm with a PAE of 11.47% in an area of 0.21 mm2, have been measured at center frequency 30 GHz. This architecture provides a new tool for silicon designers to achieve high output power, customizable bias, and a way to minimize, if not eliminate, matching circuitry at millimeter-wave frequencies. Simulation, layout, fabrication, and measurement results are presented in this letter.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:21
,
Issue:
10
)
Date of Publication: Oct. 2011
- Page(s):
- 544 - 546
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 12273850
- Digital Object Identifier :
- 10.1109/LMWC.2011.2164782
- Product Type:
- Journals & Magazines
- Date of Publication :
- 25 August 2011
- Date of Current Version :
- 06 October 2011
- Issue Date :
- Oct. 2011
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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