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This letter discusses the first implementation of the high voltage/high power (HiVP) architecture in silicon at millimeter-wave frequencies. Implemented in a commercial 0.12 μm SiGe HBT BiCMOS process, PSAT = 19.0 dBm with a PAE of 11.47% in an area of 0.21 mm2, have been measured at center frequency 30 GHz. This architecture provides a new tool for silicon designers to achieve high output power, customizable bias, and a way to minimize, if not eliminate, matching circuitry at millimeter-wave frequencies. Simulation, layout, fabrication, and measurement results are presented in this letter.