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A Three Stage, Fully Differential 128–157 GHz CMOS Amplifier with Wide Band Matching

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3 Author(s)
Zhiwei Xu ; HRL Laboratories, LLC, Malibu, CA, USA ; Qun Jane Gu ; Mau-Chung Frank Chang

A fully differential amplifier has been realized in 65 nm CMOS technology, which has demonstrated 20 dB peak gain, over 10 dB gain from 128-157 GHz, and 40 GHz positive gain range from 126 to 166 GHz. By using cascode architecture with high bulk voltage tied to the cascode devices in deep-Nwell, the amplifier ensures stability and can use 2 V supply reliably. By inserting a π-matching network between cascode devices, it broadens the amplifier working range. This amplifier occupies 0.05 mm2 chip area, delivers over 5 dBm output power, and consumes 51 mA from a 2 V supply. To the authors' best knowledge, this amplifier achieves the highest gain for CMOS amplifier beyond 100 GHz.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:21 ,  Issue: 10 )