Referenced Items are not available for this document.
A fully differential amplifier has been realized in 65 nm CMOS technology, which has demonstrated 20 dB peak gain, over 10 dB gain from 128-157 GHz, and 40 GHz positive gain range from 126 to 166 GHz. By using cascode architecture with high bulk voltage tied to the cascode devices in deep-Nwell, the amplifier ensures stability and can use 2 V supply reliably. By inserting a π-matching network between cascode devices, it broadens the amplifier working range. This amplifier occupies 0.05 mm2 chip area, delivers over 5 dBm output power, and consumes 51 mA from a 2 V supply. To the authors' best knowledge, this amplifier achieves the highest gain for CMOS amplifier beyond 100 GHz.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:21
,
Issue:
10
)
Date of Publication: Oct. 2011
- Page(s):
- 550 - 552
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 12273849
- Digital Object Identifier :
- 10.1109/LMWC.2011.2163928
- Product Type:
- Journals & Magazines
- Date of Publication :
- 25 August 2011
- Date of Current Version :
- 06 October 2011
- Issue Date :
- Oct. 2011
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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