Passing voltage levels measured from the human metal model tester are correlated with the failure current levels obtained from the transmission line pulsing (TLP) tester for electrostatic discharge protection devices fabricated in 0.18- and 0.35-μm MOS technologies. Various relevant TLP parameters, including the holding voltage and on -state resistance, are accounted for in the improved correlation formula developed in this study.
Published in:
Electron Device Letters, IEEE
(Volume:32
,
Issue:
9
)
Date of Publication: Sept. 2011