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Pyroelectric properties of PZT(90/10) thin films on Pt/Si substrates

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3 Author(s)
Jie Huang ; Dept. of Mater. Sci. & Eng., Cincinnati Univ., OH, USA ; Jingyu Lian ; Buchanan, Relva C.

The pyroelectric properties of PZT (90/10) thin films were investigated. The films were prepared by metallo-organic spin deposition (MOD) technique on Pt(111)/Si substrates. Dense, (111)-oriented films, ~1.0 μm thick, had a remnant polarization of 13-20 μC/cm2 and a coercive field of 10~30 kV/cm. By using static measurement, a pyroelectric coefficient of the order of 10-8 C/cm2 K was determined in the temperature range of 25~140°C, comparable to bulk PZT (90/10) ceramics. Under dynamic pyroelectric measurement conditions, using chopped laser radiation, current and voltage response was detected. Thermal-electric conversion studies indicated significant potential for infrared imaging and energy conversion applications for these PZT films

Published in:

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on  (Volume:2 )

Date of Conference:

18-21 Aug 1996

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