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Low Partial Pressure Chemical Vapor Deposition of Graphene on Copper

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9 Author(s)
Jie Sun ; Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden ; Lindvall, N. ; Cole, Matthew T. ; Angel, K.T.T.
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A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just PCH4 ~ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO3 solution is used to remove Cu before transferring graphene onto SiO2/Si substrates or carbon grids. The graphene can be made suspended over a ~12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ~0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ~1800 cm2/Vs at 4.2 K and ~1200 cm2/Vs at room temperature.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 2 )

Date of Publication:

March 2012

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