By Topic

High Power Digitally-Controlled SOI CMOS Attenuator With Wide Attenuation Range

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Jeong, Jinho ; Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea ; Pornpromlikit, S. ; Scuderi, Ant. ; Presti, C.
more authors

An attenuator is presented in a 0.13 μm silicon-on-insulator (SOI) CMOS technology, to be used for power control of RF wireless transmitters. The design is based on a T-network consisting of two series switches and 63 shunt switches. A gate switching technique is utilized in the series switches for high power handling and high isolation. Measurements at 1.88 GHz show that the minimum insertion loss is as low as 0.6 dB and maximum attenuation is 55.3 dB with worst input return loss of 8.1 dB. The attenuation can be digitally controlled in steps of around 1 dB. The 1 dB gain compression point is as high as 21.0 dBm in the through mode.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:21 ,  Issue: 8 )