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Ambipolar double-gate FET binary-decision- diagram (Am-BDD) for reconfigurable logic cells

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4 Author(s)
K. Jabeur ; Lyon Institute of Nanotechnology, University of Lyon, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully, France ; N. Yakymets ; I. O'Connor ; S. Le Beux

A novel Ambipolar Binary Decision Diagram (Am-BDD) is proposed in this paper, to adapt this logic synthesis and verification technique to logic built with ambipolar devices. We demonstrate how this method enables us to build DG-CNTFET-based n-input reconfigurable cells based on pass-transistor-logic obtained from Am-BDDs. We also show how specific correlations between configuration signals can lead to a minimization of their total number. Using the Am-BDD technique, we designed a reconfigurable 2-input cell capable of achieving 16 functions and demonstrating a significant reduction in power consumption (6x) with a reduced worst-case time delay when compared to a manually designed reconfigurable 2-input dynamic logic cell DRLC-7T.

Published in:

2011 IEEE/ACM International Symposium on Nanoscale Architectures

Date of Conference:

8-9 June 2011