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A 60 GHz Tunable Output Profile Power Amplifier in 65 nm CMOS

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5 Author(s)
Liu, J.Y.-C. ; Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA ; Gu, Q.J. ; Tang, A. ; Ning-Yi Wang
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A fully integrated three-stage 60 GHz power amplifier with amplitude/phase compensation is realized in 65 nm CMOS. An adaptive feedback bias scheme with three control knobs is proposed to extend the linear operating region. At a supply voltage of 1 V, the fully differential amplifier achieves a linear gain of 15 dB and occupies a compact area of 0.056 mm2. It achieves a minimal Psat-P1dB separation of 0.6 dB by extending the P1dB by 8.5 dB. To our best knowledge, this is the smallest Psat-P1dB separation reported to date. With on-chip phase compensation, the output phase variation is reduced by 57%.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:21 ,  Issue: 7 )