Referenced Items are not available for this document.
This paper proposes a simple test circuit for characterization of MOS transistor mismatch in a standard 2 μm CMOS technology. Measurements have been performed both in the saturation and subthreshold regimes in order to obtain an accurate characterization in a wide range of operations. The parameter mismatch estimation algorithm is based on Multiple Linear Regression and is able to furnish information on the estimation accuracy
Published in:
Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
Date of Conference: 17-20 Mar 1997
- Page(s):
- 173 - 178
- Meeting Date :
- 17 Mar 1997-20 Mar 1997
- Print ISBN:
- 0-7803-3243-1
- INSPEC Accession Number:
- 5665299
- Conference Location :
- Monterey, CA
- Digital Object Identifier :
- 10.1109/ICMTS.1997.589380
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
