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Investigation of the depletion-modulation characteristics of low-power 10.6-/spl mu/m IR modulators based on the resonant plasma effect

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5 Author(s)
Stiens, J. ; Lab. of Microelectron. & Technol., Vrije Univ., Brussels, Belgium ; De Tandt, C. ; Ranson, W. ; Vounckx, R.
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Achieving low-power dissipation in modulators for 10.6 /spl mu/m is a challenge, In this letter, we confirm the previously predicted modulation characteristics of the integrated mirror optical switch based on the resonant plasma effect in highly doped semiconductors. At 12 V and 14 mW, an external modulation depth of 18% was measured. The proposed design limited the clocking frequency to a few megahertz. The achieved power dissipation is about three orders of magnitude less than the commercially available electrooptical modulators operating at these wavelengths.

Published in:

Photonics Technology Letters, IEEE  (Volume:9 ,  Issue: 6 )

Date of Publication:

June 1997

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