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A JFET-CMOS radiation-tolerant charge-sensitive preamplifier

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4 Author(s)
W. Buttler ; Fraunhofer Inst. of Microelectron., Circuits & Syst., Duisburg, West Germany ; B. J. Hosticka ; G. Lutz ; P. F. Manfredi

A monolithic charge-sensitive preamplifier based on n-channel junction field-effect transistors (JFETs) and p-channel MOS has been realized for applications with microelectrode detectors in elementary particle physics. Radiation resistance tests carried out with the preamplifier exposed to γ-rays emitted by a 60Co source have shown no significant increase of the equivalent noise source up to 150-krd absorbed dose

Published in:

IEEE Journal of Solid-State Circuits  (Volume:25 ,  Issue: 4 )