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Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

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12 Author(s)
Deal, W.R. ; Northrop Grumman Corp., Redondo Beach, CA, USA ; Leong, K. ; Radisic, V. ; Sarkozy, S.
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In this letter, low noise amplification at 0.67 THz is demonstrated for the first time. A packaged InP High Electron Mobility Transistor (HEMT) amplifier is reported to achieve a noise figure of 13 dB with an associated gain greater than 7 dB at 670 GHz using a high fMAX InP HEMT transistors in a 5 stage coplanar waveguide integrated circuit. A 10-stage version is also reported to reach a peak gain of 30 dB. These results indicate that InP HEMT integrated circuits can be useful at frequencies approaching a terahertz.

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Microwave and Wireless Components Letters, IEEE  (Volume:21 ,  Issue: 7 )