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In this work the low-frequency dispersion affecting active devices is experimentally characterized by performing on-wafer vector large-signal measurements at different substrate temperatures. As a result, the influence of the thermal effects and traps can be clearly highlighted under different operating frequencies. Particularly, active load pull measurements are performed both at low- and high-frequency in order to evaluate the device performance under realistic operating conditions. As a case study an AlGaN/GaN HEMT on SiC is considered and a clear dependence of the dynamic characteristics on both the operating frequency and temperature is observed.