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We propose a novel double heterojunction bipolar transistor (DHBT)-based capacitorless one-transistor (1T) DRAM cell employing a narrow bandgap SiGe body and Si/SiGe heterojunction for a possible next-generation DRAM cell. It has a body with a narrow bandgap and a valence band offset between the source/drain and the body. Through an extended investigation via TCAD simulation, we verified the advantages of the proposed DHBT-based 1T DRAM cell, including an improved excess carrier generation rate, a high current gain, a large sensing margin, and a suppressed sensitivity to the bandgap-narrowing effect in the heavily doped source and drain.
Date of Publication: July 2011