Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
8 Author(s)
Hao, Yue ; Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi''an, China ; Ling Yang ; Xiaohua Ma ; Jigang Ma
more authors

Gate-recessed AlGaN/AlN/GaN metal-oxide-semiconductor heterostructure high-mobility transistors (MOS-HEMTs) on SiC substrate are fabricated. The device with a gate length of 0.6 μm and a gate periphery of 100 μm exhibits a maximum dc drain current density of 1.59 A/mm at VGS = 3 V with an extrinsic transconductance (gm) of 374 mS/mm. An extrinsic current gain cutoff frequency (fT) of 19 GHz and a maximum oscillation frequency (fmax) of 50 GHz are deduced from S-parameter measurements. The output power density is 13 W/mm, and the associated power-added efficiency is 73% at 4-GHz frequency and 45-V drain bias. The power performance is comparable to state-of-the art AlGaN/GaN HEMTs, which demonstrates the great potential of gate-recessed MOS-HEMTs as a very promising alternative to GaN HEMTs.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 5 )