By Topic

An Inductor-Less Noise-Cancelling Broadband Low Noise Amplifier With Composite Transistor Pair in 90 nm CMOS Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)

A new broadband low-noise amplifier (LNA) is proposed in this paper. The LNA utilizes a composite NMOS/PMOS cross-coupled transistor pair to increase the amplification while reducing the noise figure. The introduced approach provides partial cancellation of noise generated by the input transistors, hence, lowering the overall noise figure. Theory, simulation and measurement results are shown in the paper. An implemented prototype using IBM 90 nm CMOS technology is evaluated using on-wafer probing and packaging. Measurements show a conversion gain of 21 dB across 2-2300 MHz frequency range, an IIP3 of -1.5 dBm at 100 MHz, and minimum and maximum noise figure of 1.4 dB and 1.7 dB from 100 MHz to 2.3 GHz for the on-wafer prototype. The LNA consumes 18 mW from 1.8 V supply and occupies an area of 0.06 mm2.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:46 ,  Issue: 5 )