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Schottky Barrier Height Inhomogeneity-Induced Deviation From Near-Ideal Pd/InAlN Schottky Contact

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4 Author(s)
Z. T. Chen ; Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya, Japan ; K. Fujita ; J. Ichikawa ; T. Egawa

A Pd/InAlN Schottky diode with leakage current as low as 1.01 × 10-6 A/cm2 at -5 V at 300 K has been fabricated. It is found that the current-voltage (I-V) characteristics of Pd/InAlN Schottky contact can be quantitatively described by taking into account the inhomogeneity of Schottky barrier height (SBH), and the SBH inhomogeneity is the main cause for the significant deviation from an ideal Schottky contact. The SBH inhomogeneity is suggested to be related to the quantum dotlike structure on InAlN surface, indicating the importance of surface effect to the investigations on those devices involving InAlN-based Schottky contact.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 5 )