Referenced Items are not available for this document.
A 1-Mb ECL (emitter coupled logic) I/O SRAM which has been fabricated using 0.8-μm BiCMOS technology is described. The die is configurable to four different organizations (1 Mb×1, 1 Mb×1 with differential output, 512 K×2 with differential output, and 256 K×4) by way of bonding options. The device, with a die size of 240 mil×475 mil, has a typical access time of 6.8 ns and is 10 K or 100 K I/O compatible with a metal option
Published in:
VLSI Circuits, 1990. Digest of Technical Papers., 1990 Symposium on
Date of Conference: 7-9 June 1990
- Page(s):
- 39 - 40
- INSPEC Accession Number:
- 3887446
- Conference Location :
- Honolulu, Hawaii, USA
- Digital Object Identifier :
- 10.1109/VLSIC.1990.111084
- Product Type:
- Conference Publications
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