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InAlN/GaN HEMTs With AlGaN Back Barriers

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4 Author(s)
Dong Seup Lee ; Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Xiang Gao ; Shiping Guo ; Palacios, T.

This letter studies the effect of AlGaN back barriers in the dc and RF performance of In0.17Al0.83N/GaN high-electron mobility transistors grown on SiC substrates. When compared to conventional structures without a back barrier, the back barrier effectively prevents the degradation of drain-induced barrier lowering and significantly improves the output resistance in sub-100-nm-gate-length devices. The reduction in short-channel effects helps to increase the frequency performance of AlGaN back-barrier devices. For a 65-nm gate length, the current gain cutoff frequency (fT) of a transistor with an AlGaN back barrier is 210 GHz, which is higher than that of the standard device with the same gate length (fT = 195 GHz).

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 5 )