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Reactor design considerations for MOCVD growth of thin films

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3 Author(s)
Z. Nami ; Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA ; A. Erbil ; G. S. May

Metal-organic chemical vapor deposition (MOCVD) performance is optimized for growing titanium dioxide (TiO2) thin films. Different gas flow directions and susceptor rotation, along with reactor geometry and shape variations are considered. Gravity proves to be an important parameter in changing the flow pattern in the reaction chamber. However, since film uniformity is not improved by changing the flow direction, modifying the reactor geometry is also proposed. Among the different geometrical parameters, the susceptor-inlet distance, inlet tube diameter, and susceptor size are considered. To minimize the occurrence of recirculation cells in the reaction chamber, modifications in the reactor shape are also suggested. Acceptable results are achieved by changing the cylindrical reactor to a diamond shape

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:10 ,  Issue: 2 )