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A wafer level monitoring method for plasma-charging damage using antenna PMOSFET test structure

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5 Author(s)
H. Watanabe ; ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan ; J. Komori ; K. Higashitani ; M. Sekine
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A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:10 ,  Issue: 2 )