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Influence of die attachment on MOS transistor matching

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4 Author(s)
J. Bastos ; Katholieke Univ., Leuven, Heverlee, Belgium ; M. S. J. Steyaert ; A. Pergoot ; W. M. Sansen

A test chip which allows the experimental study of the influence of die residual stresses on MOS transistor matching, in a standard 0.7 μm CMOS technology, is described. The influence of eutectic die bonding on transistor matching is found to be a major degradation factor. Polyimide bonded dies do not significantly affect the matching performance of MOS transistors

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:10 ,  Issue: 2 )