By Topic

High Power Terahertz and Millimeter-Wave Oscillator Design: A Systematic Approach

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Omeed Momeni ; Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA ; Ehsan Afshari

A systematic approach to designing high frequency and high power oscillators using activity condition is introduced. This method finds the best topology to achieve frequencies close to the fmax of the transistors. It also determines the maximum frequency of oscillation for a fixed circuit topology, considering the quality factor of the passive components. Using this technique, in a 0.13 μm CMOS process, we design and implement 121 GHz and 104 GHz fundamental oscillators with the output power of -3.5 dBm and -2.7 dBm, respectively. Next, we introduce a novel triple-push structure to realize 256 GHz and 482 GHz oscillators. The 256 GHz oscillator was implemented in a 0.13 μm CMOS process and the output power of -17 dBm was measured. The 482 GHz oscillator generates -7.9 dBm (0.16 mW) in a 65 nm CMOS process.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:46 ,  Issue: 3 )