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Enhanced material properties of silicon carbide (SiC) offer improved performance capabilities for power electronic devices compared to traditional silicon (Si) components. This paper reports on the experimental characterization of a 1200-V, 800-A all-SiC dual power module that incorporates twenty 80-A SiC MOSFETs and twenty 50-A SiC junction barrier Schottky diodes. Forward and reverse conduction characteristics were measured at multiple gate voltages, current sharing was examined between the MOSFETs, and switching energies were calculated for various currents. Additionally, this module has operated in a full-bridge circuit with a peak loading of 900 Adc, a 600 Vdc bus, and a junction temperatures of 153°C. From the experimental data, a model of the module was created and used in a dc-ac inverter simulation study to demonstrate the possible benefits of SiC compared to Si technology. The use of an all-SiC module was shown to reduce inverter losses by 40% or more for most operating conditions. Furthermore, for similar output current levels, the all-SiC module can operate at switching frequencies four times higher than that of the Si module. This advanced dual power module demonstrates the ability to produce a high-current high-power switch using SiC technology.