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In this letter, we present an experimental evaluation of self-heating (SH) effects (SHEs) using S-parameter measurements for both n- and p-type SOI FinFETs. It is revealed that NFETs show a stronger SHE than PFETs, which ultimately leads to a higher variation of the intrinsic gain in NFETs. Our results also show that long-channel devices typically used in analog design show pronounced negative output conductance, which consequently leads to a negative intrinsic gain at low frequencies. Another implication of the strong SHE is that the interdie variability of the isothermal intrinsic gain gets “amplified” at lower frequencies due to SH.