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Oxygen-Soluble Gate Electrodes for Prolonged High-  \kappa Gate-Stack Reliability

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7 Author(s)
Raghavan, N. ; Div. of Microelectron., Nanyang Technol. Univ., Singapore, Singapore ; Pey, Kin Leong ; Wu, Xing ; Wenhu Liu
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We propose the use of high-oxygen-solubility metalgate electrodes as a material of choice for high- gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective designfor-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 3 )