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Experimental evidence of unconventional room-temperature Quantum Hall effect (RTQHE) in 65nm Si nMOSFETs at very low magnetic fields

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2 Author(s)
Gutiérrez D, E.A. ; Dept. of Electron., INAOE, Puebla, Mexico ; Guarin, F.

For the first time we introduce experimental evidence of an anomalous or unconventional Room-Temperature QHE at B fields at and below 50 mT (milli-Teslas). The observed Ultra-High-Conductivity-State (UHCS), and negative channel current are explained in terms of a fractional-dimensional charge transmission, quasi-particle-phonon resonance, and marginal phase (semiconductor-insulator) transition. We believe this work is fundamental to understand the physics of low- and fractional-dimensional devices, which may open a wider and deeper road for Si-based devices applications.

Published in:

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Date of Conference:

14-16 Sept. 2010

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