Drain-extended MOS transistors capable for operation at 10V and at radio frequencies

This work reports on the integration of n-type lateral-drain-extended MOS transistors (LDMOS) in a 0.13 μm SiGe BiCMOS technology. The transistors are realized with no additional process steps using the core dual-gate-oxide CMOS flow only. LDMOS drift regions are formed by compensating lightly-doped drain (LDD) implantations of NMOS and PMOS transistors of the baseline process. Stable operation with less than 10% parameter variations in 10 years is achieved up to operating voltages V
_DD,max
of 10V for devices with breakdown voltages BV
_DSS
= 30V and on-resistances R
_ON
= 7.3Ωmm. Devices for different operating voltages V
_DD,max
are realized by layout variations. Devices with V
_DD,max
= 6V demonstrate breakdown voltages BV
_DSS
= 25V, on-resistances R
_ON
= 4.9Ωmm, and peak transit frequencies f
_T
= 32 GHz.