By Topic

Formation of three-dimensional and nanowall structures on silicon using a hydrogen-assisted high aspect ratio etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Azimi, S. ; School of Electrical and Computer Engineering, Thin Film and Nano-Electronic Laboratory, Nano-Electronic Center of Excellence, University of Tehran, Tehran 14395, Iran ; Mehran, M. ; Amini, A. ; Vali, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3497033 

The authors report the realization of highly featured three-dimensional structures on silicon substrates with a single masking layer using a hydrogen-assisted deep reactive ion etching process. Oxygen, hydrogen, and SF6 are used in a sequential passivation and etching process to achieve high aspect ratio features. By controlling the flows of these gases and the power and timing of each subsequence, it is possible to achieve desired deep vertical etching, controlled underetching, and recovery, yielding three-dimensional features directly on silicon substrates. Etch rates up to 0.75 μm/min have been achieved with a low plasma power density of 1 W/cm2. In addition, features with a controllable underetching and recovery with more than 8 μm in sidewall recession have been achieved. Furthermore, values of aspect ratio higher than 40 can be obtained. The formation of three-dimensional features with nanowall structures is reported.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 6 )