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Lateral-field-excitation acoustic resonators for monolithic oscillators and filters

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3 Author(s)
Woo Wai Lau ; Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA ; Yonghua Song ; Eun Sok Kim

This paper describes a high-frequency acoustic resonator built on a low-stress silicon nitride cantilever for monolithic filters and oscillators at above 1 GHz. The unique features of our resonator include (1) usage of lateral electric field (rather than thickness-direction field) to excite bulk acoustic wave in piezoelectric ZnO film and (2) usage of surface micromachining to fabricate the resonator on silicon wafer. Our resonator is measured to have a resonant frequency of 531 MHz with Q of 738 and figure-of-merit of 207

Published in:

Frequency Control Symposium, 1996. 50th., Proceedings of the 1996 IEEE International.

Date of Conference:

5-7 Jun 1996

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